View IRFZ44NL_146658.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 94153
Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
IRFZ44NS IRFZ44NL
HEXFET(R) Power MOSFET
D
VDSS = 55V RDS(on) = 0.0175
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44NL) is available for lowprofile applications.
G
ID = 49A
S
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
49 35 160 3.8 94 0.63 20 25 9.4 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
1.5 40
Units
C/W
www.irf.com
1
03/13/01
IRFZ44NS/IRFZ44NL
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss EAS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 55 --- --- 2.0 19 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 17.5 m VGS = 10V, ID = 25A 4.0 V VDS = V GS, ID = 250A --- S VDS = 25V, ID = 25A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 63 ID = 25A 14 nC VDS = 44V 23 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 25A ns --- RG = 12 --- VGS = 10V, See Fig. 10 --- nH Between lead, and center of die contact 1470 --- VGS = 0V 360 --- VDS = 25V 88 --- pF = 1.0MHz, See Fig. 5 530 150 mJ IAS = 25A, L = 0.47mH Typ. --- 0.058 --- --- --- --- --- --- --- --- --- --- 12 60 44 45 7.5
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 49 --- --- showing the A G integral reverse --- --- 160 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, VGS = 0V --- 63 95 ns TJ = 25C, IF = 25A --- 170 260 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD 25A, di/dt 230A/s, VDD V(BR)DSS,
TJ 175C
Starting TJ = 25C, L = 0.48mH
RG = 25, IAS = 25A. (See Figure 12)
Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175C .
** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
2
www.irf.com
IRFZ44NS/IRFZ44NL
1000
TO P VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
1000
I , D rain-to-S ou rc e C urre nt (A ) D
BO TTOM
100
I , Drain-to-S ource C urrent (A ) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
10
4 .5 V
4.5V
10
2 0 s P U L S E W ID T H
1 0.1 1
TJC==25C T 25 C
10 100
A
1 0.1 1
20 s P U LS E W ID TH TJ = 1 75 C T C = 175C
10 100
A
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R D S(o n) , D ra in-to-S o urc e O n R e s is tan c e (N orm aliz ed )
ID = 41A
I D , D ra in -to -S ourc e C urre nt (A )
2.0
100
TJ = 2 5 C TJ = 1 7 5 C
1.5
1.0
10
0.5
1 4 5 6 7
V DS = 25V 2 0 s P U LS E W ID TH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , G a te-to-S ource Vo ltag e (V)
T J , J unc tion T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFZ44NS/IRFZ44NL
2500 20
2000
C iss
1500
C oss
1000
V G S , G ate-to-S ource V oltage (V )
V GS C is s C rs s C o ss
= = = =
0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd
I D = 25 A V D S = 44 V V D S = 28 V
16
C , Capacitance (pF)
12
8
C rss
500
4
0 1 10 100
A
0 0 10 20 30
FO R TE S T C IR C U IT S E E FIG U R E 1 3
40 50 60 70
A
V D S , D rain-to-S ourc e V oltage (V )
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
I S D , R everse Drain C urrent (A )
O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n)
I D , Drain C urrent (A )
100
100
10 s
T J = 1 75 C
100 s
10
TJ = 25 C
10 1m s
1 0.5 1.0 1.5 2.0
V G S = 0V
2.5
A
1 1
T C = 25 C T J = 17 5C S ing le P u lse
10
10m s
A
100
3.0
V S D , S ource-to-D rain V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFZ44NS/IRFZ44NL
V DS
50
RD
VGS RG
D.U.T.
+
-V DD
40
I D , Drain Current (A)
10V
30
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
20
VDS 90%
10
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01
PDM t1 t2 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFZ44NS/IRFZ44NL
500
L VDS D.U.T. RG + V - DD
10 V
E A S , S ingle P ulse A valanche E nergy (m J)
TO P
400
B O TTO M
ID 1 0A 18 A 25A
300
IAS tp
0.01
200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp VDD VDS
100
0
V D D = 25 V
25 50 75 100 125 150
A
175
S tarting T J , J unc tion T em perature (C )
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRFZ44NS/IRFZ44NL
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRFZ44NS/IRFZ44NL
D2Pak Package Outline
1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2
4.69 (.1 85) 4.20 (.1 65)
-B 1.3 2 (.05 2) 1.2 2 (.04 8)
1 0.16 (.4 00 ) RE F.
6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0)
0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM
0.5 5 (.022 ) 0.4 6 (.018 )
M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E
8.89 (.3 50 ) 17 .78 (.70 0)
3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X
Part Marking Information
D2Pak
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
A
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
8
www.irf.com
IRFZ44NS/IRFZ44NL
Package Outline
TO-262 Outline
Part Marking Information
TO-262
www.irf.com
9
IRFZ44NS/IRFZ44NL
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
1 .60 (.06 3) 1 .50 (.05 9) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TR L
10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .10 (.63 4 ) 15 .90 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)
F E E D D IRE C TIO N
13.50 (.532 ) 12.80 (.504 )
2 7.4 0 (1.079) 2 3.9 0 (.9 41)
4
33 0.00 (1 4.1 73) MA X.
60.00 (2.3 62) MIN .
NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .
26 .40 (1.03 9) 24 .40 (.961 ) 3
3 0.40 (1.1 97) MAX. 4
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01
10
www.irf.com

▲Up To Search▲

Price & Availability of IRFZ44NL

	To Download IRFZ44NL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .